Process for producing electrode for semiconductor element and semiconductor device having the electrode
US6218223A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1994 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Jun 10, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is provided for fabricating a structure wherein the longitudinal direction of a base electrode and the longitudinal direction of an emitter electrode are the same. This structure is special and provides the advantage that, even if the element is microminiaturized, improved driving performance can be obtained. In another aspect, the longitudinal direction of the gate electrode is the same as the longitudinal direction of the source-drain electrodes. Thereby, miniaturization in the gate-width direction can be achieved together with an improvement in the driving performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.