Patent · US Expired

Process for producing electrode for semiconductor element and semiconductor device having the electrode

US6218223A · kind A · utility

25Cited by
8References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 10, 1994
Grant dateApr 17, 2001
Priority date
Expiry dateJun 10, 2014

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A process is provided for fabricating a structure wherein the longitudinal direction of a base electrode and the longitudinal direction of an emitter electrode are the same. This structure is special and provides the advantage that, even if the element is microminiaturized, improved driving performance can be obtained. In another aspect, the longitudinal direction of the gate electrode is the same as the longitudinal direction of the source-drain electrodes. Thereby, miniaturization in the gate-width direction can be achieved together with an improvement in the driving performance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.