Method for forming a semiconductor device

US6218302A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Gregor Braeckelmann · Austin, US
• Ramnath Venkatraman · San Jose, US
• Matthew T. Herrick · Austin, US
• Cindy Reidsema Simpson · Austin, US
• Robert W. Fiordalice · Los Altos Hills, US
• Dean J. Denning · Alamo, US
• Ajay Jain · Austin, US
• Cristiano Capasso · Austin, US

Key dates

• Filing date: Jul 21, 1998
• Grant date: Apr 17, 2001
• Expiry date: Jul 21, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19043
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An interconnect (60) is formed overlying a substrate (10). In one embodiment, an adhesion/barrier layer (81), a copper-alloy seed layer (42), and a copper film (43) are deposited overlying the substrate (10), and the substrate (10) is annealed. In an alternate embodiment, a copper film is deposited over the substrate, and the copper film is annealed. In yet another embodiment, an adhesion/barrier layer (81), a seed layer (82), a conductive film (83), and a copper-alloy capping film (84) are deposited over the substrate (10) to form an interconnect (92). The deposition and annealing steps can be performed on a common processing platform.