Semiconductor device having a porous insulation film
US6218318A · kind A · utility
44Cited by
14References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Feb 4, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/081
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a porous interlayer insulation film including therein a stacking of SiO.sub.2 particles having a diameter in the range between about 5 nm and about 50 nm and stacked so as to form a void between adjacent particles, wherein the interlayer insulation film has a porosity in the range between about 13% and about 42%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.