III-V nitride resonant tunneling
US6218677A · kind A · utility
82Cited by
1References
4Claims
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Key dates
| Filing date | Aug 15, 1994 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Aug 15, 2014 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A resonant tunneling diode (400) made of a quantum well (406) with tunneling barriers (404, 408) made of two different materials such as calcium fluoride (408) and silicon dioxide (404). The calcium fluoride provides lattice match between the emitter (410) and the quantum well (406). Further resonant tunneling diodes with silicon lattice match barriers may be made of III-V compounds containing nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.