Photodiode with buffer layer
US6218684A · kind A · utility
43Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Dec 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/222
Abstract
A half-transmittance photodiode usable as a photodetector in receivers for "ping-pong transmission" is improved in temperature characteristic, so that a half-transmittance photodiode usable at low temperatures is available. A p-n junction is formed in a buffer layer, not in an absorption layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.