Antifuse based on silicided polysilicon bipolar transistor
US6218722A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1999 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Jun 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved antifuse which employs the base-emitter junction of a silicided single polysilicon bipolar transistor. The distance between the base metal and emitter metal is shortened and results from self aligning process steps rather than lithographic steps, resulting in a lower and better controlled programming voltage, programming energy and ON state resistance. Typically the conductive filament formed in the new antifuse is about 0.65 microns long and is formed by a voltage pulse having a relatively slow rise time (e.g. 150 microseconds), resulting in improved properties which provide advantages in circuit design and in manufacturing circuits using the new antifuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.