Group III nitride field emitters
US6218771A · kind A · utility
16Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Jun 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/304
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Field emitter as a source of electrons and method for making are provided. The emitter is formed by growth of a nitride compound of a group III element or alloys of group III elements on a substrate having a lattice mismatch with the thin film. The lattice mismatch causes columnar growth in the film. The micro columns have tips, thus forming an array of crystalline microtips of the low work function nitride material. The nitride compound is doped during growth. Gallium nitride grown on (111) silicon and doped with silicon produces a surface having low threshold electric field for emission and high current per unit area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.