Integrated circuit including a driver for a metal-semiconductor field-effect transistor
US6218891A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2000 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Jul 28, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated circuit including a metal-semiconductor field-effect transistor (MESFET) having a nominal intrinsic capacitance and requiring a negative voltage to bias the MESFET into a non-conduction state, a method of driving the MESFET and a power converter employing the integrated circuit and method. In one embodiment, the integrated circuit includes a driver including a bias capacitor integrated with the MESFET. The driver is configured to apply a positive voltage to bias the MESFET into a conduction state, and apply the negative voltage to bias the MESFET into the non-conduction state without employing an external negative bias source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.