Ferromagnetic tunnel magnetoresistance effect element and method of producing the same
US6219274A · kind A · utility
25Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1999 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a ferromagnetic tunnel magnetoresistance effect element having a multilayered structure comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween, wherein the tunnel barrier layer is formed as an oxide film obtained by oxidizing a non-magnetic metal layer according to a radical oxidation method. Thus, there can be obtained a ferromagnetic tunnel magnetoresistance effect element which is excellent in productivity and quality stability and highly excellent in TMR effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.