Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
US6219275A · kind A · utility
52Cited by
8References
23Claims
0Family size
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Key dates
| Filing date | Jan 25, 1999 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Jan 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic thin film element is provided with a magnetoresistive film including a first magnetic layer composed of a perpendicular magnetization film, a second magnetic layer composed of a perpendicular magnetization film having a higher coercive force than that of the first magnetic layer, and a nonmagnetic layer interposed between the first magnetic layer and the second magnetic layer. The resistance of the magnetoresistive film varies depending on whether or not the magnetic spins of the first magnetic layer and the second magnetic layer are in the same direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.