Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)

US6221154A · kind A · utility

Assignee

• CITY UNIVERSITY OF HONG KONG · CN

Inventors

• Shuit-Tong Lee · Sha Tin, CN
• Chun-Sing Lee · Hong Kong, CN
• Ning Wang · Beijing, CN
• Igor Bello · Sha Tin, CN
• Carol Lai · Woodinville, US
• Xing Zhou · Wuxi, CN
• Frederick Chi Kan Au · Hong Kong, CN

Key dates

• Filing date: Feb 18, 1999
• Grant date: Apr 24, 2001
• Expiry date: Feb 18, 2019

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/89
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different kinds of chemical vapor deposition methods. The apparatus includes graphite powder as the carbon source, and silicon powder as silicon sources. Metal powders (Fe, Cr and/or Ni) are used as catalyst. Hydrogen was the only feeding gas to the system.