Patent · US Expired

Magnetoresistance effect film and magnetoresistance effect type head

US6221518A · kind A · utility

14Cited by
17References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 13, 1999
Grant dateApr 24, 2001
Priority date
Expiry dateApr 13, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/1121
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

In a spin valve type magnetoresistance effect film comprising a multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from the other surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer, the antiferromagnetic layer is made of a compound containing Mn and having a CuAu-I type regular crystal structure and is crystallized by laser irradiation to show antiferromagnetism. Thus, an excellent effect is achieved that mutual diffusion in the laminate film is very small and the MR ratio is very large. Further, when a spin valve head is formed, an excellent effect is achieved that the sensitivity is high and the output is large. Further, the laminate film forming the spin valve film can be reduced in thickness so that a product can be more compact. Moreover, an excellent effect is achieved that the energy loss is small and the productivity is high.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.