Wide wavelength range high efficiency avalanche light detector with negative feedback
US6222209A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1998 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Nov 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/225
Abstract
A novel use of a solid state light detector with a low impedance substrate is described. Light that enters the substrate after traversing the antireflective layer creates an electron-hole pair. The electrons are collected in a crystalline epitaxial layer that spans the space charge region, or depletion layer. A high electric field accelerates free electrons inside the depletion region. The electrons collide with the lattice to free more holes and electrons resulting from the presence of an n-p junction, or diode. The diode is formed by placing the crystalline layer which has positive doping in close proximity with the electrodes which have negative doping. The continual generation of charge carriers results in avalanche multiplication with a large multiplication coefficient. During the avalanche process, electrons can be collected enabling light detection. A resistive layer is used to quench, or stop, the avalanche process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.