Semiconductor device of high breakdown voltage using semiconductive film and its manufacturing method
US6222231A · kind A · utility
1Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2000 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Feb 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Continuously after forming a semiconductive film, a conducting film is formed on the semiconductive film. This conducting film serves as a block film for blocking diffusion of oxygen when a heated wafer is transferred from a furnace to the atmosphere. As a result, oxygen is prevented from entering the semiconductive film from the outside and diffusing therein. Further, after protecting the semiconductive film, the conducting film is entirely removed by etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.