SOI CMOS sense amplifier with enhanced matching characteristics and sense point tolerance
US6222394A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2000 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Feb 3, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) sense amplifier is provided with improved matching characteristics and sense point tolerance under no penalty of performance degradation. The sense amplifier includes a silicon-on-insulator (SOI) field effect transistor. A flooding field effect transistor is coupled to a body of the silicon-on-insulator (SOI) field effect transistor. The flooding field effect transistor is activated before the sense amplifier is set. The flooding field effect transistor has an opposite polarity of the silicon-on-insulator (SOI) field effect transistor. The flooding field effect transistor provides a charging path to a voltage supply rail. A pair of flooding field effect transistors serve as charging to voltage supply rail elements for silicon-on-insulator (SOI) field effect transistors on each side of complementary bitline structures of the sense amplifier. The flooding field effect transistor is substantially smaller than the silicon-on-insulator (SOI) field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.