Bottom or dual spin valve having a seed layer that results in an improved antiferromagnetic layer
US6222707A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1998 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Dec 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3268
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method for providing a spin valve is disclosed. The spin valve is formed on a substrate. In one aspect, the method and system include providing a seed layer including NiFe above the substrate and providing an antiferromagnetic layer on the seed layer. The seed layer provides the desired texture for the antiferromagnetic layer. The seed layer could include NiFeCr, NiFeNb, NiFeRh, or a NiFe/Cu multilayer. The method and system further include providing a pinned layer above the antiferromagnetic layer, the pinned layer being exchange coupled to the antiferromagnetic layer, providing a spacer layer above the pinned layer and providing a free layer above the spacer layer. In a second aspect, the method and system include providing a seed layer including Cu instead of NiFe. In a third aspect, the method and system include providing a synthetic antiferromagnetic layer in lieu of the antiferromagnetic layer and the pinned layer. In this aspect, the seed layer provides the desired texture for the synthetic antiferromagnetic layer. Note that in any aspect, the spin valve can include a bottom spin valve or a dual spin valve.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.