Patent · US Expired

Laser diode of the type having a buried heterostructure

US6222865A · kind A · utility

4Cited by

5References

6Claims

0Family size

Assignee

Telefonaktiebolaget LM Ericsson (Publ) · SE

Inventors

Bjorn Stoltz · Stockholm, SE
Olof Sahlen · Solna, SE
Ulf Ohlander · Bromma, SE

Key dates

Filing date	Jul 2, 1998
Grant date	Apr 24, 2001
Priority date	—
Expiry date	Jul 2, 2018

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/32391
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In a semiconductor laser of the BH-type comprising a lateral current blocking structure which is constituted of an n-p-n-p- or n-SI-n-p-sequence of layers, located on both sides of a buried active region, one or more thin layers are inserted between the second n-doped layer and the second p-doped layer. The thin, extra layers are p-doped and consist of alternatingly materials having a high bandgap and a low bandgap. These thin layers provide a larger forward voltage drop at moderate to high current densities and thereby give a better current confinement in the laser, what in turn gives a higher optical output power and a smaller deviation of the output power/current characteristic thereof from a linear behavior.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.