Surface emitting semiconductor laser, its producing method and surface emitting semiconductor laser array
US6222866A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 29, 1997 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Dec 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3203
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser comprises a semiconductor multilayer reflecting film of a first conductivity type, a quantum well active layer having at least one quantum well structure, a semiconductor multilayer reflecting film of a second conductivity type and a contact layer of the second conductivity type sequentially stacked in a layered manner inside a concavity formed on a surface of a semiconductor substrate. The contact layer of the second conductivity type is formed in a buried manner so that the surface of the contact layer is approximately flush with the surface of the semiconductor substrate. A second electrode is formed on a part of the surface of the contact layer other than a part left for forming a light guiding region thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.