Method for manufacturing group III-V compound semiconductor
US6225195A · kind A · utility
7Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 1998 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Aug 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a group III-V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (where x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) by metalorganic vapor phase epitaxy method is provided. The group III-V compound semiconductor has a semiconductor layer consisting of a p-type dopant-nondoped layer, and a semiconductor layer including a p-type dopant-doped layer. In the method, a reactor for growing the semiconductor layer consisting of a p-type dopant-nondoped layer and a reactor for doping a p-type dopant are mutually different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.