Recovery of damages in a field oxide caused by high energy ion implant process
US6225231A · kind A · utility
1Cited by
12References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 3, 1999 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Jun 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for recovering the original properties of a silicon oxide film that has suffered a high energy implantation of dopants in the underlying silicon substrate, includes a brief heat treatment without causing an excessive lateral diffusion in the silicon substrate of the implanted dopants. Heat treating in an oven at a temperature of 800.degree. C. for few minutes per wafer, which was subjected to high energy implantation, makes it possible to recover etch rate characteristics that are practically similar to those of the original non-implanted silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.