Semiconductor components and methods of manufacturing semiconductor components

US6225653A · kind A · utility

Assignee

• Micronas GmbH · DE

Inventors

• Gunter Igel · Teningen, DE
• Joachim Krumrey · Eisenlohrsweg, AT

Key dates

• Filing date: Nov 19, 1999
• Grant date: May 1, 2001
• Expiry date: Nov 19, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/221

Abstract

A semiconductor component (1a) has a highly-doped substrate (4) of a first type of doping into which a highly-doped layer (15) of a second type of doping is introduced in some areas to form a pn Zener junction (16), and a low-doped area (17) of the second type of doping extends from this highly-doped layer (15) in the substrate (4) into an epitaxial layer (5) as far as the substrate (4) of the epitaxial layer (5). A Schottky metal (11) at least partially covering the low-doped, diffused area (17) is applied to the side of the epitaxial layer (5) facing away from the substrate (4) to form a Schottky junction (18) between this area (17) and the Schottky metal (11) and another Schottky junction (13) between the Schottky metal and the epitaxial layer (5). Due to the series connection of the oppositely polarized Zener diode and Schottky diode, a low temperature coefficient is achieved. In addition, a low forward voltage is achieved due to the Schottky diode which is polarized in the forward direction of the Zener diode and is connected in parallel to the series connection of a Zener diode and the first Schottky diode.