Semiconductor structure and method of manufacture
US6225674A · kind A · utility
30Cited by
17References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1999 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Apr 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure (10) having device isolation structures (43, 44) and shielding structures (39, 40). The shielding structures (39, 40) are formed in a semiconductor material (11) and the device isolation structures (43, 44) are formed within the corresponding shielding structures (39, 40). A noise generating device is formed within a first shielding structure (43) and a noise sensitive device is formed within a second shielding structure (44). The two shielding structures (39, 40) are grounded and prevent noise from the noise generating device from interfering with the noise sensitive device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.