Microelectronic interconnect structures and methods for forming the same
US6225681A · kind A · utility
6Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1999 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Sep 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved microelectronic interconnect structure and methods for forming the structure are disclosed. The microelectronic interconnect structure includes an organic-based coating that facilitates formation of electrical connections to the structure. The coating may be used to reduce oxidation of copper interconnects, which allows wire or bump attachment to the copper interconnect using conventional wire bonding or bump interconnect methods and apparatus. The coating is applied during a post chemical mechanical polishing process by placing the interconnect structure into a solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.