Magnetic thin film memory, method of writing information in it, and me
US6226197A · kind A · utility
227Cited by
2References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 22, 1999 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Oct 22, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention relates to a magnetic thin film memory having a hybrid element including a field effect transistor and a magnetoresistive thin film connected to the field effect transistor in parallel. In the magnetic thin film memory, the hybrid element is preferably arranged in plurality in a matrix state. The present invention also relates to a method of writing information in this magnetic thin film memory, and a method of reading the information written in this magnetic thin film memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.