Making epitaxial semiconductor device
US6228181A · kind A · utility
41Cited by
6References
2Claims
0Family size
Inventors
Key dates
| Filing date | Sep 28, 1998 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Sep 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/221
Abstract
An epitaxial semiconductor wafer characterized by making the P-N junction face which having either flat or uneven face in a manner of uniformed thickness from the top surface, due to making a P or N type first layer by the Chemical Vapor Deposition on the basic plate and also to making a N or P type secondary layer on said first layer, while both of the layers being highly and pure controlled silicon, and the light reflectors being located at the out side of said each P or N type layer for concentrating the incoming light to the P-N junction portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.