Electrophotographic selenium photoconductor
US6228545A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jun 3, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08207
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A selenium photoconductor has a charge transport layer and a charge generation layer formed on a conductive substrate. Both the charge generation layer and the charge transport layer are made from a selenium-arsenic alloy, with the charge generation layer having a concentration of arsenic greater than the concentration of arsenic in the charge transport layer. This concentration distribution results in a photoconductor having excellent charge-generation efficiency and mobility. In an alternate embodiment, a halogen is doped into the charge generation layer and charge transport layer. The resulting photoconductor is useful in large-scale, high speed printing operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.