Method of fabricating semiconductor device
US6228728A · kind A · utility
20Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Feb 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0275
Abstract
According to the inventive method of fabricating a semiconductor device, a silicon substrate is exposed to an oxygen atmosphere of 600.degree. C. to 900.degree. C., for forming silicon oxide films on surfaces of epitaxial silicon layers and those of silicon fragments. Thus, a method of fabricating a semiconductor device capable of preventing electrodes thereof from shorting can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.