Semiconductor and method of fabricating
US6229155A · kind A · utility
1Cited by
10References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1998 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | May 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor structure that comprises a substrate; a conductor; and insulating layer separating the conductor from the substrate; and a removable conductive strap coupled to the conductor and the substrate for maintaining a common voltage between the conductor and substrate during ion beam and/or plasma processing; and a method for fabricating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.