Inverted thin film transistor having a trapezoidal-shaped protective layer
US6229156A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1997 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | May 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
Abstract
A thin film transistor of the present invention is composed of a transparent insulating substrate, a gate electrode formed on the transparent insulating substrate, a gate insulating film formed on the transparent insulating substrate including the gate electrode, a semiconductor active layer formed corresponding to the gate electrode through the gate insulating film, a source region and a drain region formed adjacent to the semiconductor active layer, a protective layer formed on the semiconductor active layer and having the side face inclined with respect to the transparent insulating substrate surface, a source electrode and a drain electrode formed respectively on the source region and the drain region, a part of which is extended onto the protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.