MOS type semiconductor apparatus
US6229180A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jan 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS type semiconductor apparatus is provided which includes a main MOS type semiconductor device, an internal control circuit connected between a control input terminal (G) and a control input port (g) of the main MOS type semiconductor device, and a protecting device connected between the control input terminal (G) and one of output terminals (S) of the apparatus, for protecting the semiconductor device or internal control circuit against overvoltage. The protecting device includes a first branch including a Zener diode (Z.sub.1p) consisting of a polysilicon layer deposited on an insulating film over the semiconductor substrate, and a second branch including a Zener diode (Z.sub.21) formed in a surface layer of the semiconductor substrate, and a diode (Z.sub.3pr) that consists of a polysilicon layer deposited on an insulating film over the semiconductor substrate, and is connected in series with the Zener diode (Z.sub.21) in a reverse direction. The first and second branches are connected in parallel with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.