Multiple stage high power diode
US6229193A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Apr 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface of the semiconductor layer, and an ohmic contact formed on an opposite surface of the semiconductor layer. The Schottky layer is formed from a metallic material with a high metal work function, and the ohmic contact is formed from a metallic material with a low metal work function. At least one of the stages is a middle stage located between two adjacent stages, such that the Schottky contact of the middle stage and the ohmic contact of one of the adjacent stages are joined together, and such that the ohmic contact of the middle stage and the Schottky contact of another one of the adjacent stages are joined together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.