Process for forming epitaxial perovskite thin film layers using halide precursors
US6231666A · kind A · utility
8Cited by
5References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Jul 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0632
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.