Photoresist stripping liquid composition
US6231677A · kind A · utility
10Cited by
5References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Feb 22, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist stripping liquid composition effective for removing resist residues after dry etching and resist ashing in the manufacturing processes of semiconductor devices, which does not corrode the different metallic materials, and wherein are comprised, as active component, one or more polycarboxylic acids and/or their salts selected from the group consisting of aliphatic polycarboxylic acids and their salts as well as aminopolycarboxylic acids and their salts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.