Method for manufacturing capacitive element
US6232178A · kind A · utility
6Cited by
6References
10Claims
0Family size
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Inventor
Key dates
| Filing date | Nov 12, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A method for forming a capacitive element comprising the steps of: forming hemispherical grains (HSGs) by treating an amorphous silicon film overlying a semiconductor substrate by means of a HSG treatment; conducting an oxidation blocking treatment on the surface of the HSGs; and introducing an impurity on the HSGs to form the capacitive element. The oxidation blocking treatment is preferably a hydrogen termination treatment which effectively prevents formation of a spontaneous oxidation film which may reduce a size of the HSGs to decrease a mechanical strength thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.