Semiconductor substrate processing method
US6232201A · kind A · utility
11Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1998 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Jul 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.