Method of fabricating contact window of semiconductor device
US6232225A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Mar 24, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a contact window of a semiconductor device, whereby a contact window of a semiconductor device is increased to offset any incline phenomenom and avoid unwanted increase in contact sheet resistance, comprises forming a lower conductive member on a semiconductor substrate, forming a first insulative film on the lower conductive member, the first insulative film being formed of an insulative material doped with impurities at a first level of concentration, the first insulative film having a wet etch rate that is proportional to the level of concentration of impurities, forming a second insulative film on the first insulative film, the second insulative film being formed of an insulative material doped with impurities at a second level of concentration that is lower than the first level of concentration of impurities, the second insulative film also having a wet etch rate that is proportional to the level of concentration of impurities, opening a contact window and exposing the lower conductive member by dry etching the second and first insulative films, and wet etching the second and first insulative films through which the contact window has been formed to inc…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.