Charge pump avoiding gain degradation due to the body effect
US6232826A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1998 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Jan 12, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/078
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A Charge Pump Avoiding Gain Degradation Due to the Body Effect. A charge pump having a first input and a first output, a stage of the charge pump including a first capacitor having a first node and a second node, the second node coupled to receive a first signal; a first p-type transistor having a first gate, a first source, and a first drain, the first gate being coupled to the first node and the first drain, the first source being coupled to the first input; a second capacitor having a third node and a fourth node, the fourth node coupled to receive a second signal; and a second p-type transistor having a second gate, a second source, and a second drain, the second gate being coupled to the third node and the second drain, the second source being coupled to the first drain, the second drain being coupled to the first output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.