Transistors providing desired threshold voltage and reduced short channel effects with forward body bias
US6232827A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 1998 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | May 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor circuit includes a first group of field effect transistors having a body and parameters including a net channel doping level DL1. The circuit also includes a conductor to provide a first voltage to the body to forward body bias the first group of transistors, the first group of transistors having a forward body bias threshold voltage (VtFBB) when forward body biased, wherein DL1 is at least 25% higher than a net channel doping level in the first group of transistors that would result in a zero body bias threshold voltage equal to VtFBB, with the parameters other than the net channel doping level being unchanged. In another embodiment, the semiconductor circuit includes a first circuit including a first group of field effect transistors having a body. The circuit also includes a first voltage source to provide a first voltage to the body such that the field effect transistors have a forward body bias, the first voltage being at a level leading to the circuit experiencing a reduced rate of soft error failures as compared to when the circuit is not forward biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.