Pressure sensor for semi-conductor
US6234027A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 9, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Sep 9, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/065
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure sensor is based, in part, on the piezoresistive effect. In this, a pressure acting from outside effects a deformation of a resistor, arranged on a membrane, whose resistance changes as a result of that deformation. Since this resistor reacts with similar sensitivity to a deformation resulting from an internal mechanical interference stress, an arrangement is proposed which, with the aid of a compensation resistor, abolishes the effect of the internal mechanical interference stress. This arrangement serves, among other purposes, to compensate for temperature hystereses in integrated sensors, that hysteresis being caused principally by metallization planes in the pressure sensor and by temperature-related creep thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.