Semiconductor mirror-polished surface wafers and method for manufacturing the same
US6234873A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1998 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Oct 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02019
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing semiconductor wafers is provided. According to this invention, wafers are obtained by slicing a single-crystal semiconductor ingot. The sliced wafers are beveled at their peripheral rims. The beveled wafers are flattened by a lapping process. The front and the rear surfaces of the flattened wafers are spin-etched with an acid etchant liquid. The glossiness of the rear surfaces of the spin-etched wafers is controlled to a value of 130-300 %. The front surfaces of the wafers whose rear surfaces have been spin-etched are polished, thereby obtaining mirror-polished surfaces. The front surfaces may also be spin-etched prior to polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.