Method of fabricating nitride semiconductor laser
US6235548A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Dec 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure is a method for fabricating a nitride semiconductor laser device of group-III nitride semiconductor having a substrate. The method includes a step of forming a crystal layer made of a group-III nitride semiconductor (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) having an added group II element over the substrate; a step of heating the crystal layer up to a predetermined temperature in a thermal treatment atmosphere and maintaining the predetermined temperature for a first time period; and a step of introducing a hydrocarbon gas into the thermal treatment atmosphere for at least a partial time period within the first time period. The method further includes a step of irradiating an electromagnetic wave or photons to the crystal layer in the at least a partial time period, wherein the electromagnetic wave or photons have an energy greater than an energy forbidden band width of the group III nitride semiconductor in the crystal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.