Method of making non-volatile memory with polysilicon spacers
US6235589A · kind A · utility
24Cited by
5References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 31, 2000 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Jan 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
Abstract
Sidewall spacers comprised of a second polycrystalline silicon film are formed on the sides of a first polycrystalline silicon film in such a way that a relationship of b.ltoreq.a=x<c/2 is satisfied where x is the thickness of the sidewall spacers, a is a distance from the surface of the first insulating film to the surface of the first polycrystalline silicon film, b is the thickness of the second polycrystalline silicon film at a time of formation thereof and c is a distance between adjoining first polycrystalline silicon films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.