Silicon-on-insulator wafer having conductive layer for detection with electrical sensors
US6238935A · kind A · utility
8Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1999 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Mar 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a silicon-on-sapphire wafer for processing by silicon-wafer-processing equipment. A layer is deposited on a backside of a silicon-on-sapphire wafer, the layer having optical and electrical properties of silicon, wherein the silicon-on-sapphire wafer may be sensed by a sensor designed to sense a presence of a silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.