Fabrication process of semiconductor device having an epitaxial substrate
US6238991A · kind A · utility
62Cited by
4References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 24, 2000 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Jan 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device formed on an epitaxial substrate includes a high-resistance region in the vicinity of an interface between a doped semiconductor substrate and an epitaxial layer thereon. The high-resistance region is advantageously formed by an ion implantation process of a dopant opposite to a dopant contained in the doped semiconductor substrate such that there is formed a depletion of carriers in the vicinity of the foregoing interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.