Sensor thin film transistor for an optical detecting sensor
US6239468A · kind A · utility
18Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1999 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Dec 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
A sensor TFT includes a substrate, a gate electrode formed on the substrate, a semiconductor layer patterned on the insulating layer to generate an optical current using received light, source and drain electrodes formed on the semiconductor layer, the source and drain electrodes being spaced apart from each other, and a conductive channel defined by an area between the source and drain electrodes, wherein the conductive channel is not rectangular-shaped, such that the channel width is increased for a fixed channel length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.