Integration type photovoltaic apparatus and method of fabricating the same
US6239474A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1998 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Sep 25, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
The present invention is to prevent a back metal electrode film from being insufficiently processed even if an amorphous silicon related material film is thinned, wherein a transparent conductive film 2, an amorphous silicon related material film 3, and a back metal electrode film 4 are formed in this order on one main surface of a light transmissive insulation substrate 1, a brittle film 5 having higher hardness than that of the back metal electrode film 4 in at least a fused state is provided on the back metal electrode film 4, and an energy beam is irradiated from the other main surface of the light transmissive insulation substrate 1, to remove the amorphous silicon related material film 3, the back metal electrode film 4, and the brittle film 5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.