Method and apparatus for switching in metal insulator metal capacitors and fet tuning capacitors for low noise oscillators
US6239665A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 2, 1999 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Nov 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03J2200/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method and apparatus are provided for switching in metal insulator metal (MIM) capacitors and field effect transistor (FET) tuning capacitors for oscillator circuits. Apparatus for switching in metal-insulator-metal (MIM) capacitors and field effect transistor (FET) tuning capacitors for oscillator circuits includes a first differential oscillator node and a second differential oscillator node. A plurality of metal-insulator-metal (MIM) capacitors are connected to the first differential oscillator nodes and a plurality of metal-insulator-metal (MIM) capacitors are connected to the second differential oscillator nodes. A respective switching transistor is connected in series with an associated one of the metal-insulator-metal (MIM) capacitors. Each switching transistor receives a decoding input and is arranged for providing an open or a ground connection for the associated one of the metal-insulator-metal (MIM) capacitors. A first field effect transistor (FET) tuning capacitor has a gate connected to the first differential oscillator node. A second field effect transistor (FET) tuning capacitor has a gate connected to the second differential oscillator node. Each of the first fiel…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.