Method for crystallizing amorphous layer
US6241817A · kind A · utility
23Cited by
4References
17Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 22, 1998 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | May 22, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for crystallizing an amorphous layer into a polycrystalline layer. The method uses a substrate under the amorphous layer and a nickel film on the amorphous layer, which are subjected to a heat treatment. The nickel film is formed by a coating step that uses a nickel-containing solution. Alternatively, a nickel and gold, or a nickel and palladium, solution can be used. The method eliminates contamination with metal in the polycrystalline silicon layer and reduces its growth temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.