Method for fabricating micro inertia sensor
US6242276A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2000 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | Jan 14, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0132
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A micro inertia sensor fabrication method in which thick silicon bonded to glass is processed at a high sectional ratio, is provided. In this method, silicon is bonded to a glass substrate, the bonded silicon is polished to have a desired thickness, a silicon structure is formed by etching the polished silicon using an RIE method, and the silicon structure is separated from the bottom by selectively etching glass below the silicon structure via grooves in etched silicon. Since the thick silicon bonded to glass is processed at a high sectional ratio, the area and thickness of the silicon to be measured are increased. Also, this method is simple since only one mask is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.