Method for fabricating singe crystal materials over CMOS devices
US6242324A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00011
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An aspect of the present invention is a method for making a functional active device (photodetector, laser, LED, optical modulator, optical switch, field effect transistor, MOSFET, MODFET, high electron mobility transistor, heterojunction bipolar transistor, resonant tunneling device, Esaki tunneling device etc.) disposed over a complementary metal oxide semiconductor (CMOS) device, having the steps; (a) forming an ultrathin compliant layer direct bonded to an oxide layer over said-CMOS device; (b) growing an epitaxial layer on said ultra-thin compliant layer (c) forming a functional active device in said epitaxial layer grown on said epitaxial layer that is grown on said ultrathin compliant layer; and (c) interconnecting said functional active device and said CMOS device, wherein said CMOS device is configured as either a readout circuit or a control circuit for said photodetector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.